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Conference Program

Program Overview (Download the final program)

Tuesday, March 11, 2008    Wednesday, March 12, 2008    Thursday, March 13, 2008
Time Audimax Time Audimax Room T01 Time Audimax
09:30 Welcome Coffee 08:30 Session 4: Packaging (Part 1) 08:3 Session 9: System Integration (Part 1)
10:30 Opening 10:00 Session 4: Packaging (Part 2) Session 5: Gate Drive and Control
10:50 Session 1: Robustness Validation 11:00 Coffee Break 10:30 Coffee Break
11:30 Session 6: Passives Session 7: Power Electronics (Part 1) 11:00 Session 9: System Integration (Part 2)
12:10 Lunch Break 12:50 Lunch Break
13:30 Session 2: Power Module Reliability 14:00 Session 8: SiC and Silicon Integrated Power (Part 1) 12:20 Lunch Break
15:50 Coffee Break 15:20 Coffee Break 13:40 Session 10: ECPE Roadmap
16:20 Session 3: EMC and Thermal Management 15:50 Session 8: SiC and Silicon Integrated Power (Part 2) Session 7: Power Electronics (Part 2) 
17:40 Panel Discussion 15:20
-15:40
Closing -
Best Poster Paper Award
20:00
-22:30
Conference Dinner 19:00
-21:30
Dialog Session - Poster

Detailed Program

Tuesday, March 11, 2008
 
Audimax Opening
10:30 J. D. van Wyk, South Africa
L. Lorenz, Infineon Technologies, China
E. Wolfgang, ECPE, Munich, Germany
 
Audimax Session 1: Robustness Validation
Chairmen: E. Wolfgang, ECPE, Germany; H.-P. Feustel, Continental Automotive, Germany
 
10:50 1.1 Robustness Validation – An Improved Qualification Method for Semiconductor Devices in Automotive (Invited paper)
H. Keller, ZVEI, Frankfurt/Main, International Work Group Robustness Validation, SAE-ZVEI-JSAE-AEC, Detroit, Frankfurt/Main
 
11:30 1.2 Predictive Reliability, Prognostics and Risk Assessment for Power Modules (Invited paper) 
C. Bailey, H. Lu, C. Yin, S. Ridout, University of Greenwich, London, United Kingdom
 
12:10-13:30 Lunch Break
 
Audimax Session 2: Power Module Reliability
Chairmen: M. Mermet-Guyennet, Alstom, France; J. Lutz, Chemnitz University of Technology, Germany
 
13:30 2.1 Lifetime Modeling and Prediction of Power Devices (Invited paper) 
M. Ciappa, ETH Zürich, Switzerland
 
14:10 2.2 Model for Power Cycling lifetime of IGBT Modules – various factors influencing lifetime
R. Bayerer, T. Licht, Infineon Technologies, Warstein; T. Herrmann, J. Lutz, M. Feller, Chemnitz University of Technology, Germany
 
14:30 2.3 Proposition of IGBT modules assembling technologies for aeronautical applications 
A. Zéanh, A. Bouzourene, J. Casutt, ThalesAvionics Electrical Systems, Chatou; O. Dalverny, M. Karama, ENI de Tarbes – (LGP), Tarbes; S. Azzopardi, E. Woirgard, Université Bordeaux, Talence, M. Mermet-Guyennet, PEARL, Alstom Transport Tarbes, Séméac, France
 
14:50 2.4 Test System for Reliability Management of Power Modules 
T. Wernicke, A. Middendorf, S. Dieckerhoff, H.Reichl, Technical University of Berlin, S. Guttowski, Fraunhofer Institute for Reliability and Microintegration, Berlin, Germany
 
15:10 2.5 Power cycling induced failure mechanisms in the viewpoint of rough temperature environment 
J. Lutz, T. Herrmann, M. Feller, Chemnitz University of Technology; R. Bayerer, T. Licht, Infineon Technologies, Germany; R. Amro, Palestine Polytechnic University, Hebron, Palestine
 
15:30 2.6 DBC substrate based EMC Transfer Molded Power Module 
K. H. Lee, O.-S. Jeon, S.-W. Lim, S.-M. Park, B.-Ok Lee, T.-K. Lee, Fairchild Semiconductor, Bucheon, Korea
 
15:50-16:20 Coffee Break
 
 
Audimax Session 3: EMC and Thermal Management
Chairmen: K. Ngo, CPES, U.S.A.M. Stoisiek, University Erlangen, Germany
 
16:20 3.1 Built-in EMC for Integrated Power Electronics Systems (Invited paper) 
J.-L. Schanen, J. Roudet, Institut National Polytechnique de Grenoble, St Martin d’Heres, France
 
17:00 3.2 EMC in Power Electronics (Invited paper)
E. Hoene, Fraunhofer IZM, Berlin, Germany
7
17:40 3.3 Design and Assembly of Power semicon-ductors with double-sided water cooling 
M. Schneider-Ramelow, T. Baumann, E. Hoene, Fraunhofer IZM, Berlin, Germany
 
18:00 3.4 Compact thermal model for the analysis of power devices thermal interactions 
B. Allard, S. M’Rad, INSA-Lyon, Villeurbanne, France; X. Jordà, X. Perpinya, Centre Nacional de Microelectrònica, Barcelona, Spain
 
18:20 3.5 Thermal Power Density Barriers of Converter Systems
U. Drofenik, J. W. Kolar, ETH Zurich, Switzerland
 
18:40 End
20:00-22:00 Conference Dinner (City Hall Nuremberg)
 
 
  Wednesday, March 12, 2008
 
Audimax Session 4: Packaging (Part 1)
Chairmen: J. Daan van Wyk, South Africa; A. Hamidi, ABB, Switzerland
 
08:30 4.1 Review on Highly Integrated Solutions for Power Electronic Devices (Invited paper)
J. Schulz-Harder, Electrovac Curamik GmbH, Regensburg, Germany
 
09:10 4.2 The Road to the Next Generation Power Module – 100% Solder free Design (Invited paper) 
U. Scheuermann, P. Beckedahl, SEMIKRON Elektronik GmbH & Co. KG, Nürnberg, Germany
 
 
Audimax Session 4: Packaging (Part 2)
 
10:00 4.3 Low-Temperature Sintering of Nanoscale Silver Paste for High-Temperature Power Chip Attachment 
G.-Q. Lu, J. N. Calata, T. G. Lei, Virginia Polytechnic Institute and State University, Blacksburg, USA
 
10:20 4.4 3D Integration of Power Semiconductor Devices based on Surface BumpTechnology 
M. Mermet-Guyennet, P. Lasserre, J. Saiz, ALSTOM Transport (PEARL), Semeac, France; A. Castellazzi, Swiss Federal Institute of Technology (ETH Zurich), Switzerland
 
10:40 4.5 A Study of Pressed Contact Technology on IGBT Devices between –40 °C and +200 °C 
G. Banckaert, M. Mermet-Guyennet, ALSTOM- Transport, Power Electronics Associated Research Laboratory (PEARL), France; A. Castellazzi, Swiss Federal Institute of Technology (ETH Zurich), Switzerland
 
11:00-11:30 Coffee Break
 
 
Room T01 Session 5: Gate Drive and Control
Chairmen: D. Bergogne, INSA Lyon, France, M. Arpilliere, Schneider-Electric, France
 
10:00 5.1 An Investigation of Gate Drive Circuits and Losses in Power Devices of Multilevel Converters for Circuit Integration to Realize High Output Power Density 
M. Kamaga, Y. Sato, Chiba University; K. Sung, Y. Hayashi, National Institute of Advanced Industrial Science and Technology, H. Ohashi, Y. Hayashi, Ibaraki National College of Technology, Ibaraki, Japan
 
10:20 5.2 High Efficiency Isolated Half-Bridge Gate Driver with PCB Integrated Transformer
S. Zeltner, Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen, Germany
 
10:40 5.3 Low-cost Digital Control for SMPS Integration
X. Lin-Shi, B. Allard, INSA-Lyon; France; S. Guo, Y. Gao, Shanghai University, Shanghai, China
 
11:00-13:30 Coffee Break
 
 
Audimax Session 6: Passives
Chairmen: J.-P. Sommer, Fraunhofer IZM, Germany; J.D. van Wyk, South Africa
 
11:30 6.1 Optimisation of DC-link capacitors 
K. Kriegel, J. Otto, Siemens AG; J. Rackles, Munich University of Applied Sciences, Germany
 
11:50 6.2 Duplex pulse controlled inverter with a film capacitor DC-link
A. Kleimaier, B. Hoffmann, A. Scherer, Compact Dynamics GmbH, Starnberg, Germany
 
12:10 6.3 Polymer bonded soft magnetic particles for planar inductive devices 
S. Egelkraut, H. Ryssel, University of Erlangen-Nuremberg, M. März, Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany
 
12:30 6.4 Printed circuit board integrated multi-out-put transformer 
E. Waffenschmidt, Philips Research, Aachen,Germany
 
12:50-14:00 Lunch Break
 
 
Room T01 Session 7: Power Electronics (Part 1) 
Chairmen: H.-G. Eckel, Siemens, Germany; G. Busatto, University Cassino, Italy
 
11:30 7.1 DCDC Converter for Hybrid Vehicle 
W. Schmidt, Continental Automotive Systems Division, Nürnberg, Germany
 
11:50 7.2 Modularity bridging future Power Electronics in automotive volume applications – speeding up HEV applications 
A. Rekofsky, R. Brey, Siemens VDO Automotive AG, Regensburg, Germany; M. Thoben, Infineon Technologies AG, Germany; C. Mertens, Volkswagen AG, Germany; G. Löcher, EPCOS AG, Germany
 
12:10 7.3 Automotive DC-DC Converter Designed for High Power-Density and High Efficiency 
M. Pavlovsky, Y. Tsuruta, A. Kawamura, Yokohama National University, Yokohama, Japan
 
12:30 7.4 Influence of Parasitic Elements on the Commutation of a Resonant Matrix Converter 
S. Schulz, A. Ecklebe, A. Lindemann, Otto-von-Guericke University, Magdeburg, Germany
 
12:50-14:00 Lunch Break
 
 
Audimax Session 8: SiC and Silicon Integrated Power (Part 1)
Chairmen: H. Ohashi, A.I.S.T., Japan; D. Silber, University Bremen, Germany
 
14:00 8.1 Compact Power Electronics due to SiC Devices (Invited paper) 
P. Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company, Erlangen, Germany
 
14:40 8.2 Normally-On devices and circuits, SiC and high temperature: using SiC JFETs in power converters (Invited Paper)
D. Bergogne, H. Morel, D. Tournier, B. Allard, D. Planson, C. Raynaud, M. Lazar, AMPERE INSA
de Lyon, Villeurbanne, France
 
15:20-15:50 Coffee Break
 
 
Audimax Session 8: SiC and Silicon Integrated Power (Part 2)
 
15:50 8.3 Issues and Options for Planar Packaging of High-Voltage SiC Diodes 
J. Xu, K.D.T. Ngo, Center for Power Electronics System (CPES), Virginia Polytechnic Institute and State University Blacksburg, USA; J. D. van Wyk, University of Johannesburg, South Africa
 
16:10 8.4 SiC JFET for high temperature power switches 
D. Bergogne, D. Tournier, R. Mousa, M. Shafiee Koor, D. Planson, H. Morel, B. Allard, INSA-Lyon, France
 
16:30 8.5 Current limiting with SiC JFET structures 
D. Tournier, D. Bergogne, A. Hamoud,D. Planson, R. Mousa, H. Morel, B. Allard, O. Brevet, INSA-Lyon, France
 
16:50 8.6 600V Converter/Inverter/Brake (CIB) Module with Integrated SOI Gate Driver IC for Medium Power Applications . 
B. Vogler, TU Ilmenau; M. Roßberg, R. Herzer, L. Reußer, T. Wurm, SEMIKRON Elektronik GmbH & Co. KG, Nürnberg, Germany
 
17:10 8.7 Life Time Prediction and Design for Reliability of Smart Power Devices for Automtive Exterior Lighting 
R. Letor, S. Russo, R. Crisafulli, STMicrolectronics, Catania, Italy
 
17:40-19:00 Panel Discussion (Audimax)
 
 
Room T01 Session 7: Power Electronics (Part 2) 
Chairmen: T. Salzmann, Siemens, Germany; G. Busatto, University Cassino, Italy
 
15:50 7.5 System Design of Compact Low-Power Inverters for the Application in Photovoltaic AC-Modules
B. Sahan, N. Henze, A. Engler, P. Zacharias, Institut für Solare Energieversorgungstechnik, ISET e.V., Kassel; T. Licht, Infineon Technologies AG, Warstein, Germany
 
16:10 7.6 Cost Reduction of PV-Inverters with SiCDMOSFETs 
B. Burger, D. Kranzer, O. Stalter, Fraunhofer Institute for Solar Energy Systems (ISE), Freiburg, Germany
 
16:30 7.7 Two-Stage Power Architecture for Voltage Regulator Application based on Coupled Magnetic Structure 
M. C. Gonzalez, P. Alou, O. García, J. A. Cobos, Universidad Politécnica de Madrid, Spain; H. Visairo, Systems Research Center, México, Intel Corporation, Mexico
 
16:50 7.8 VHDL-AMS simulation of integrated power systems: a unified solution for multi-domain multi-level abstraction analysis 
A. Castellazzi, M. Ciappa, W. Fichtner, Swiss Federal Instituteof Technology (ETH Zurich), Switzerland; M. Mermet-Guyennet, ALSTOM Transport (PEARL), France
 
17:40-19:00 Panel Discussion: (Audimax)
Intelligent Power Electronics for Energy Efficiency – Research Needs and Opportunities
Chairman: Thomas Harder, ECPE European Center for Power Electronics e.V.
 
M. Sanchez-Jimenez, European Commission, ICT for Sustainable Growth
D. Boroyevich, CPES/Virginia Tech (the Power Electronics Network in the US)
H. Ohashi, AIST/PERC (the Power Electronics Network in Japan)
B. Rauscher, STMicroelectronics
J. A. Cobos, Universidad Politécnica de Madrid
B. Ferreira, TU Delft
L. Lorenz, Infineon Technologies
 
 
Foyer Session 11: Dialog Session – Posters
19:00-21:30 Franconian snacks and beverages will be Served
 
Best Poster Paper Award Committee
H.-J. Schulze, Infineon Technologies, Germany; S. Azzopardi, University Bordeaux, France; A. Consoli, University Catania, Italy; S. Jun, Siemens, China; F. Osterwald, Danfoss, Germany
 
P2.7 Base Plate Shape Optimisation for High-Power IGBT Modules 
J.-P. Sommer, B. Michel, Fraunhofer Institute for Reliability and Micro Integration (IZM), Berlin; R. Bayerer, R. Tschirbs, InfineonTechnologies AG, Warstein, Germany
 
P2.8 Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules 
G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo, University of Cassino, Italy
 
P3.6 Extraction of Efficient Thermal Models for Life Limiting Interfaces in Power Modules
M. Musallam, C. M. Johnson, University of Nottingham, United Kingdom
 
P3.7 Direct Substrate Cooling of Power Electronics
R. Skuriat, C. M. Johnson, The University of Nottingham, United Kingdom
 
P3.8 Cooling of Insulated Assemblies
S. Förster, A. Lindemann, Otto-von-Guericke University Magdeburg, Germany
 
P5.4 A digital control technique for high-performances DC-DC converters
V. Boscaino, G. Capponi, G. M. Di Blasi, P. Livreri, Università degli Studi di Palermo; F. Marino, STMicroelectronics, Catania, Italy
 
P6.5 Comparative study of three transformer concepts for high current dual active bridge converters
Y. Wang, B. Roodenburg, S.W H. de Haan, Technical University Delft, The Netherlands
 
P6.9 Adjustable speed generation system with axial flux permanent magnet generator
W. Koczara, Warsaw University of Technology, Poland; Neil L. Brown, J. Al-Tayie, N. Al Khayat, R. Seliga, E. Ernest, A. Krasnodebski, Cummins Generator Technologies, Stamford, United Kingdom
 
P6.10 EMS Analysis on Digital Pulse Width Modulators
E. Orietto, G. Spiazzi, P. Mattavelli, Universitàdi Padova; S. Saggini, Università di Udine, Italy
 
P6.11 Robustness Analysis of DC Distributed Power Systems by Means of Behavioral DC-DC Converter Models 
J. A. Oliver, R. Prieto, L. Laguna, J. A. Cobos, Universidad Politécnica de Madrid (UPM), Spain
 
P8.8 The ESBT® (Emitter-Switched Bipolar Transistor): a new monolithic power actuator technology devoted to high voltage and high frequency applications 
C. Ronsisvalle, V. Enea, STMicroelectronics, Catania, Italy
 
P8.9 Trade-off between Energy Savings and Execution Time Applying DVS to a Microprocessor 
M. Vasi´c, O. García, P. Alou, J. A. Oliver, J. A. Cobos, Universidad de Politécnica en Madrid, Spain
 
P8.10 Analysis of STI Thin-SOI LDMOS transistors for Smart Power and high frequency applications
I. Cortes, P. Fernandez-Martinez, D. Flores, S. Hidalgo, J. Rebollo, Centro Nacional de Microelectrónica, Barcelona, Spain
 
P9.8 Performance Comparison of a Buck Converter Using Shielded-Substrate and Co-Packaged Planar Inductors
M. H. F. Lim, D. Gilham, F. C. Lee, K. D. T. Ngo, Virginia Polytechnic Institute and State University, J. D. van Wyk, University of Johnannesburg, South Africa
 
P9.9 PEEC-Based Numerical Optimization of Compact Radial Position Sensors for Active Magnetic Bearings 
A. Müsing, C. Zingerli, P. Imoberdorf, J. W. Kolar, ETH Zürich, Switzerland
 
P10.6 High Temperature and Power Electronics Systems in Automotive Applications –The Approach of the ZVEI Working Group ‘High Temperature Electronics’
M. Rittner, Robert Bosch GmbH, Schwieberdingen, Germany
 
 
  Thursday, March 13, 2008
 
Audimax Session 9: System Integration (Part 1)
Chairmen: D. Boroyevich, CPES, U.S.A.G. Wachutka, TU Munich, Germany
 
08:30 9.1 System Integration Using Advanced Power Semiconductors (Invited paper)
G. Deboy, Infineon Technologies Austria AG, Villach, Austria
 
09:10 9.2 A High Number of Phases Enables High Frequency Techniques and a better Thermal Management in Medium Power Converters
O. Garcia, P. Alou, J. A. Oliver, J. A. Cobos, Universidad Politécnica de Madrid (UPM); P. Zumel, Universidad Carlos III de Madrid, Spain
 
09:30 9.3 System Integration Approach for High Power Density Drives 
J. Popovi´c Gerber, European Centre for Power Electronics (ECPE), Nuremberg; M. Gerber, J. A. Ferreira, Delft University of Technology, Delft, The Netherlands
 
09:50 9.4 An Integrated Electronic Ballast for High Intensity Discharge (HID) Lamps
Y. Jiang, F. C. Lee, Y. Liang, Virginia Polytechnic Institute and State University, USA; J. D. van Wyk, University of Johannesburg, South Africa;W. Liu, International Rectifier, El Segundo, USA
 
10:10 9.5 Current Sensor Dedicated for High Temperature Integrated Power Electronics 
F. Grecki, W. Koczara, G. Iwanski, J. Lastowiecki, Warsaw University of Technology, Polan
 
10:30-11:00 Coffee Break
 
Audimax Session 9: System Integration (Part 2)
 
11:00 9.6 Advanced Power Electronics Systems (Invited paper)
H. Ohashi, Tokyo Institute of Technology, Japan
 
11:40 9.7 IPEM-Based Power Electronics System Integration (Invited paper)
D. Boroyevich, F. C. Lee, J. D. Van Wyk, G.-Q. Lu, E. P. Scott, M. Xu, R. Burgos, F. Wang, CPES, Virginia Tech, Blacksburg, VA, USA; T. M. Jahns, T. A. Lipo, R. D. Lorenz, University of Wisconsin-Madison, WI, USA; T. P. Chow, Rensselaer Polytechnic Institute, Troy, NY, USA
 
12:20-13:40 Lunch Break
 
 
Audimax Session 10: ECPE Roadmap
Chairmen: L. Lorenz, Infineon Technologies, China, T. Harder, ECPE, Germany
 
10.1 The ECPE Roadmap Initiative 
T. Harder, L. Lorenz, ECPE European Center for Power Electronics e.V., Nuremberg, Germany
 
10.2 Power Electronics Technology Roadmaps – a Bottom-up Approach 
E. Wolfgang, T. Harder, ECPE, Nürnberg, Germany
 
10.3 Automotive Power Electronics Roadmap
J. Kolar, ETH Zurich, Switzerland; M. März, Fraunhofer IISB, Germany, E. Wolfgang, Germany
 
10.4 Power Electronics Technology Roadmap: High Frequency Power Supplies (P<1kW)
José A. Cobos, UPM, Spain, Cian O’Mathuna, Tyndall, Ireland
 
10.5 ECPE Power Electronics Research and Technology Roadmaps: Team No. 5: High Frequency Power Conversion > 1kW 
T. Reimann, ISLE GmbH, Ilmenau, Germany
 
15:20 Closing - Best Poster Paper Award
J. Daan van Wyk, South Africa; E. Wolfgang, Munich, Germany
Munich, Germany
 
15:40 End of CIPS 2008

 
  
 









CIPS 2008